Characteristics of CE Transistor 4. 0000435236 00000 n ~u-�l���[�~=�V��藰��������� ����o��O�^Y�{�x�Z��4������`�M���'x�r@(��� �9&�s8P9�jx4!|J���p4��9���0)���b>G��hB����a�N�s0L��#�V��'4L���V��'0L���V��'0L!��l=�ab=f�t=�a��B0L�^���@5@�`�; ��������R(�>4P �&���s:��ab��¤ԇ�� T� ��#�W�M}h�XOį:]O`�XOį:]O`�HOGį:[Oh�XOį:]O`�XOį:]O`����W��'4L��bӜ�'0Lt$�I�$�@ё��G�E0P��ħ9���01�caR>G�|���ф�9(��#bԜ��h����0 �Á">���hB�����s����2OTL.iaE�p����O�D��UH��i��bnnF�h�sa6��29s��`'s��"a��'g�o�|�n �b�Δq#�T�8a��$z��' �4���.qE�T��C+�8r\U�u�������b�O�DHCJ�P��j�eI���qŴB� !��aC�&nY�qG1�*pl��*�%φ%�����@}5e>����h�ӛKf.\�ѹ=~��"Sa�v��q�̕ 0000491768 00000 n To analyze RC- … It can be triggered by reaching its breakover voltage (+ or -). Record the readings. ; V GT is a range of gate voltages that will trigger conduction. 0000491551 00000 n _____ Power Electronics Lab, Department of Electrical Engineering, UET, Lahore. ��(�)0P�S�%�} 94 0 obj Increase in V BB1 increases the value of peak and valley voltages. By applying proper signal to the gate, the firing angle of the device can be controlled. 0000014932 00000 n VI CHARACTERISTICS OF IGBT 20 5. IPC LAB MANUAL 3361702 IC DEPARTMENT GOVERNMENT POLYTECHNIC GANDHINAGAR Page 1 Experiment No: 1 S.C.R. UJT Triggering of 3. 3. Physics Page 1 of 8 EXPERIMENT: DIODE & ZENER DIODE Objective:- To study the forward and reverse bias characteristics of Study of Characteristics of SCR, MOSFETs &IGBTs AIM: 1. Choose Experiment 2: “RTD Characteristics”. 3. Figure 6.3b. 7-15 3 Controlled HWR & FWR using RCcircuit. 2.5V-45V 1.5V-AGMRCET DEPT OF E&C Tabular Column: V1 = V DS2 =15V or 12V V GS V I DS (mA) 0V 8V(Max) (b) Drain Characteristics… EC% 2 8 ELECTRONICS AND MICROPROCESSORS LAB L T P C 0 3 1 0 LIST OF EXPERIMENTS ELECTRONICS (;3(5,0(176 15 1. >> Note: If the connections are made wrong the kit may get damaged. These triggering circuits usually generate trigger pulses for firing the device. Dual channel Oscilloscope 3. To determine holding, latching current and break over voltage of given SCR. Experiment 2: Characteristics of Two Pumps in Series a) Set up the hydraulics bench valves, as shown in Figure 10.9, to perform the two pumps in series test. Sketch the VI characteristics of TRIAC. VI CHARACTERISTICS OF TRIAC 8 3. Two continuously variable overload & short circuit protected DC regulated power supplies of 0-3v for Gate Current and 0-30v for MT1 & MT2 are Two DC power p-n . Physics Page 1 of 8 EXPERIMENT: DIODE & ZENER DIODE Objective:- To study the forward and reverse bias characteristics of diode and zener diode. Output characteristics The base current I B is kept constant (eg. LAB MANUAL ELECTRONIC DEVICES & CIRCUITS LAB Dept. Rheostat – Working, Construction, Types & Uses, RFID Reader and Tag – Ultimate Guide on RFID Module, Instantaneous on-state voltage – 1.5 Volts. �Sh�x�%��H�N��b� �O9�~p�j���*EP�'"=���D� �C�@Q�5��mU1hM�����)� �=�zy�Y�C�H��֍����T-+$�8$ ����}�F�)}U���2F&�o�����V+w-'iC`��[�+�5�I������Bk�VlT���x��u�q��l�ϸ�FB�Ml�V��c�y�vY�B]}qE�[�2��[M}EFfv �¬H]���,�e=,8#�xQ�VS�,��m�����u�}�����΁Ĵ�ي�e[��:���PV���}���S�D��b']�D���;�2W�O������;�a/qZx���%j#,E�Y�W�c}7e>�������ܳ��:����-�1�4C�ϓEM8��,�ٟkfWd1��EP�`A#�S�q��B����+2��2��=͌�{o"u;�7[x��� kzx���Po!aE�Vq��֭�~}5t���S��`�R Aq�|0P�����*T$����.����|:�Á"JGŔ�@P�(���@ ��>������)�P:(�t4P�(���@ ���>������4U�G���tM��bM��y�(�T ۥ���@��J[|ISp�XSl�eM����D4P���^�@uD�`��`Zf?4P�~`����@1����D����^���@1����C���#�_.`/�~p�XS���5��5��^YSh�HS��mhISp�XS l�eM��bM9�ŗ5���é`�/i �%d����f5�� 91 0 obj Study of the characteristics of Triac AIM: To obtain the V-I characteristics of TRIAC for both forward and reverse biased conduction. Increase in V BB1 increases the value of peak and valley voltages. %PDF-1.4 Notice from the I-V characteristics that the output collector current is controlled by the input base current as modeled in Equation. ��ju�٘�2&R��[��}�B�6�ٔ�=g���b﭅o��g�x�b0����(�n���s��D��v�fƝ3��3šG��0g�r��p\J3��cR�9P-�b�DU\��>�z��"(�)4P�Sh�ħ���>J| 92 0 obj ��(�)0P��� 2. 0000491583 00000 n You compiled your data and plotted the points on a graph to form a “family” of characteristic curves To get your data, you first set The trigger pulse should be of sufficient magnitude and duration so that firing of the device is assured. 05-09 3 Controlled HWR and FWR using RC triggering circuit 10-14 4 UJT firing circuit for HWR and FWR circuits 15-20 5 Generation of firing signals for thyristors/ trials using digital circuits / microprocessor. Repeat the experiment with the V-notch weir plate, but with 5 mm increments in water surface elevation. 0000014910 00000 n T����T�x��$ Testing triac using a multimeter. It has similar characteristics to an SCR but it differs for it consists of a DIAC with a gate terminal. It has a pair of phase controlled SCRs connected in inverse parallel manner on the same chip. eval(ez_write_tag([[300,250],'circuitstoday_com-medrectangle-3','ezslot_1',108,'0','0']));Typical V-I characteristics of a triac are shown in figure. Experiment 5 Registration No. 5. _____ Power Electronics Lab, Department of Electrical Engineering, UET, Lahore. This is expected because triac consists of two SCRs connected in parallel but opposite in … Press Esc to cancel. Table 1. The base current I B is kept constant (eg. A multimeter can be used to test the health of a triac. The experiment is repeated with V CE kept constant say 2V, 3V, 4V etc. �N��Z���>r�91��0�*s����#m��bM��5��5(�(�T�i Readings taken at 10 nm intervals are sufficient to outline an absorbance spectrum except perhaps at absorbance peaks where additional points may be required to characterize the curve more completely. *TRIAC’s have very small switching frequencies. Our webiste has thousands of circuits, projects and other information you that will find interesting. Usually, a duration of 35 us is sufficient for sustaining the firing of the device. SCR Characteristics 3 2. 0000182678 00000 n 7-15 3 Controlled HWR & FWR using RC Triggering circuit. POWER ELECTRONICS LAB CHARACTERISTICS OF IGBT Experiment 1c Aim: To study the output and transfer characteristics of IGBT Apparatus: Trainers Kit Ammeter (0-200mA) Voltmeter (0-20V) Patch Chords Circuit Diagram: Procedure: Out-Put Characteristics 6) Connect the collector, emitter and the gate terminals to the characteristics circuit Lab X: I-V Characteristics of Metal-Oxide-Semiconductor Field Effect Transisitors (MOSFETs) – Page 6 Experimentally, the channel conductance in the linear region is measured by holding VDS to a value of 50 mV to ensure linear operation. Theory:-A Semiconductor diode is prepared by joining P and N sections of a /Contents 94 0 R Characteristics of Uni Junction Transistor DIGITAL EXPERIMENTS (12) 6. You compiled your data and plotted the points on a graph to form a “family” of characteristic curves To get your data, you first set the base current on a specific value, and then varied V … V DRM is the maximum repetitive peak voltage (usually the maximum peak voltage of the applied AC wave) that can be reliably tolerated. Exp-2. Figure 9.3: Position of the notch and Vernier height gauge to set the datum. The triac has on and off state characteristics similar to SCR but now the char acteristic is applicable to both positive and negative voltages. 5 5.0 TRIAC TRIGGERING MODES 5.1 Create the TRIAC AC POWER CONTROL circuit block. P-N JUNCTION DIODE CHARACTERISTICS AIM: 1.To plot Volt-Ampere Characteristics of Germanium and Silicon P-N Junction When is the sensitivity of TRIAC greatest? Experiment 2: Characteristics of Two Pumps in Series a) Set up the hydraulics bench valves, as shown in Figure 10.9, to perform the two pumps in series test. Now the collector voltage is increased by adjusting the rheostat Rh 2. 0000432995 00000 n In this lab, you will study the I-V characteristics and small-signal model of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). ☞Now vary VAK voltage slowly, correspondingly note down the VAK and IA readings and plot the graph. Theory: An TRIAC is a device which can be turned on through the gate pulse for both positive and negative values of V 6), connect the function generator and connect the oscilloscope to test points A and B. To plot the characteristics of SCR and to find the forward resistance, holding current and ... readings for every 5V and enter the readings in the tabular column. 91 33 To obtain V-I characteristics and to find on-state forward resistance of given SCR. endobj to a value of 50 mV to ensure linear operation. 6. ��H>��} Inference: There is a negative resistance region from peak point to valley point. It can be triggered by reaching its breakover voltage (+ or -). This is expected because triac consists of two SCRs connected in parallel but opposite in direc tions. No 1. T���X�ħ�K"�(�)0P�S`��'�`/��S`�ħ�@�O���oh*�K"�(�h�(����>*��*'@M ����%���^���@ ����CU5%���/6��b?4P�~p�R��=�O�:���Sh�d�J`���N���u 0000001315 00000 n MOSFET Characteristics 15 4. The triac can be operated with either positive or negative gate control voltage but in normal operation usually the gate voltage is positive in … Zener Diode Characteristics i) V-I Characteristics ii) Zener Diode act as a Voltage Regulator 4. The family of curves obtained by plotting I C against V CE for each value of I B is called output characteristics. Fig. 4. Inference: There is a negative resistance region from peak point to valley point. ��(�) ы�} 1 Thyristors DC Characteristics PREPARED BY: J.B. G. Ibarra 1.0 OBJECTIVES 1.1 To become 2. TRANSIENT 6. The triac is designed with two SCRs which are fabricated in the opposite direction in a crystal. The experiment is repeated with V CE kept constant say 2V, 3V, 4V etc. 0000017964 00000 n 0000371364 00000 n 0000241512 00000 n 0000015518 00000 n <> 0000014974 00000 n Apparatus 1. RC CIRCUITS LABORATORY EXPERIMENT 6 TRANSISTOR CHARACTERISTICS 6.1 ABSTRACT In this experiment, the output I-V characteristic curves, the small-signal low frequency equivalent circuit parameters, and the switching �(�t�KgJ%��J~u�)�P:�HL顁�����bJ�%?�U;(�t8P �(�cN�$�����. 5 R-C Triggering TRIAC Circuit Objectives: 1. MT2 is positive with respect to MTX in the first quadrant and it is negative in the third quad rant. startxref Power Electronics Lab manual SSIT - 1 - CONTENTS Experiment No Page. Set up the experiment according to circuit (figure. Collect seven head and discharge readings for each weir. 6.3.2 Graphical Analysis A graphical analysis of the BJT as both a switch and an amplifier can be obtained from the output I-V characteristics by means of a load-line construction. The first quadrant is the region wherein MT2 is positive w.r.t MT1 and vice- versa for the third quadrant. endobj and determine the Break over voltage, on state resistance Holding current. 0000015452 00000 n trailer 6.3.2 illustrates the main characteristics of the triac. Thank you. Measure the voltage across R6 and across the triac, respectively. This list is not all-inclusive; however, it does contain the most commonly used symbols. b) Start pumps 1 and 2, and increase the speed until the pumps are operating at 60 rev/sec. A chart of the symbols used in the Lab IV. 0000491689 00000 n x��}ۮf�q��(��Ď���y>do%���`�(���=��H��H���J#R�����F.���I�~�t����$��?��Zݫ�����{��W��o݃���^�������;?�q5�����޹��MK�6FJ�}"R�$����U�~sԊ$) �6s�g-O��rt��:�q]�֊��*%��������7�n����K��VI}���K�kI�Z�c㱔�麯k� �5�$3��Ef��[˦V�MJF����c�q�+�$�h�=�5z���j ��`j�MI6�e�A�Iu�w�Y��w������h�.�k?k�X��[w��E[��]25?�jK�"�e-�5���}�i���0��f��>��ۚ/���vI%���Ҳ��RU��k��uI�����Z��nޛZm��.It-���֜UOmE�ot-s�ݘf-���0櫄f�g����Җ\�}튭��*�=��r��b��5�ܢ��sO#����$ײ0�� �>W}>�k��Ǭ�L��3��KIF,�b�|eG[�a�j����'�)���u[��b9G����˺Q��"%���b��g�"�]2�.�y��럽}z��AI����y��'7_x�������>|�敯��r���_�ʫ���/~�߸?�y�K���ꗆ�����W����Q���������ʿ��7�}��w��/�����y���o�O��'��?�}�5����c����w�7���y���-�ኯ�w��w��O�7���O���k�_}S)x�z��T���T���- r�?d� ��� q9&�r4L%�a�x�\�I�\�XQ01��ab.��$\���S���r,L��!Cab.�Dz�=Ba"=�ab=�ww�&�S�ڗ���0��J�ZsIOh�XOk�e=�a�wB0L�N���� �0u@�`ދX{X�=0L�{X����01�a����� ���01�aa��ļ��r�^.Xg,�{h�XO댅������ YO`�HO�b�aIOh�XO k�e=�ab=9�5�������Xk.� �)a���'0Lt���#�0�y�����D0L��k_�\����p9&�r0L�#�˱01�����N\����s9&�r4L�#��?����9f̌�%��B^��T�����,�`YC�&Z�� 0 Two DC power supply Introduction A thyristor is a four-layer p-n-p-n semiconductor device consisting of three p-n junctions. and corresponding graphs are plotted. 1-6 2 Static characteristics of MOSFET & IGBT. Lab #1 Establishing and Displaying Characteristics in AC Technology Due date: TBD Objective • Familiarization with the use of an oscilloscope and function generator. 0000089174 00000 n V BO is the maximum forward or reverse voltage that the triac can tolerate before it breaks over into uncontrolled conduction. stream 0000504293 00000 n Show your calculations for voltage with firing angle in reading 3 Show your calculations for voltage with firing angle in reading 7 Sketch the variation of output voltage with firing angle. The TRIAC is 5 layer, 3 terminal Power semiconductor device. �5��e ���Yއ�"f ���WC�&�we�޹-�dcku�ͥ%���u0Q�:�*��赯���%����5�����ҨYܮF��WԬn"Z�5��~����8 �^Kfg�+4;k�}ϒ���Y��>KE9��i -�튠%b[�W-f-k5e�"���%�i -�FҚ¶?�bi 2 �%�W4-� �%s�ѱdW�,�ꎢ坩�k1�XҐZr-!��z��c_�8��0ڶ�K�,��ZC�&��ۊ�5��Bk�!��ZC�+�� IGBT Characteristics 175. Experiment No. Dual channel Oscilloscope 3. 0000491445 00000 n APPARATUS REQUIRED: i. 0000015586 00000 n ���%�} Based on the experiment, there are four possible ways to trigger the TRIAC. ... like a triac without gate terminal, as shown in figure. IGBT Characteristics 17 5. The reading shows the setting of main time base (time/div). Type above and press Enter to search. Objective The objectives of this experiment are to: a) determine the characteristics of flow over a rectangular and a triangular weir, and b) determine the value of the discharge coefficient for both notches. <> of ECE CREC 3 1. Aim: To study the V-I characteristics of SCR. To plot the input and transfer3. & latching current Power electronic trainer 2. Study of Characteristics of SCR, MOSFETs &IGBTs AIM: 1. endobj This site is awsome. It is a bidirectional device, means it can conduct current in both the directions. 16-19 4 20 AC- voltage controller by using TRIAC-DIAC combination.-22 5 UJT firing circuit for HWR & FWR. Based on the experiment, there are four possible ways to trigger the TRIAC. POWER ELECTRONICS LAB Department Of Electrical And Electronics Engineering ... Experiment- 1 1. Fig. Experiment (1) characteristics of the thyristor Experiment aim To study and plot the characteristics of the thyristor. ☞Repeat from step 2 for another value of gate current IG. 20µA) by adjusting the rheostat Rh 1. This may lead to damage of the UJT. 0000091415 00000 n The corresponding collector current I C is noted. The triac has on and off state characteristics similar to SCR but now the char acteristic is applicable to both positive and negative voltages. where VMT21 and VGl are the voltages of terminal MT2 and gate with respect to terminal MT1.eval(ez_write_tag([[580,400],'circuitstoday_com-box-4','ezslot_2',110,'0','0'])); The device, when starts conduction permits a very heavy amount of current to flow through it. 93 0 obj ?��t��s���FV1���Y[Z,��I���g2�NI|w��^w&��U��&ut�&ut�OW���E��Y�lQ>�Ѯ%����˧7��C�Oo��_���-�~��.�'���E���EӮ�#��GE����x��F�+V�-6魆�>��3I�GEN�]�� 10. By keeping the base current (I B) constant, collector- emitter (V CE) voltage is varied and the corresponding I C values are obtained. Rectifiers (without and with filter) i) Half-wave Rectifier ii) Full-wave Rectifier 5. 2. In this experiment, you measured the characteristics of a typical NPN Transistor-an MPSA20. Characteristics AIM: To Test the V-I characteristics of S.C.R. Study the front panel carefully and observe the buttons on the screen. Operating characteristics of triac in the 1st and 3rd quadrants are similar but for the direction of flow of current and applied voltage. 8.2. 0000015657 00000 n k*�-��)4PtF���(�@��H�#F4PB�l�Δ��)�P:(�t4P�(���@1���:O��( S:(�t8P�(��?��(�We�`z2E��3o�Fk�A�8SS��̳b�+��� Repeat the above experiment for different values of VDS2 = 15V. Physics LAB SUBJECT CODE: BT 2001 NAME OF DEPARTMENT: Engg. VI Characteristics of PN Junction Diode 2. %%EOF VI Characteristics of Zener Diode 3. EXPERIMENT 7:Observation of characteristics of a Zener diode Debangshu Mukherjee BS.c Physics,1st Year Chennai Mathematical Institute 7.11.2008 1 Aim of experiment In this experiment, we try to observe the relation between 0000299407 00000 n <> Connect the circuit as shown in Figure 1.4. View ind module 1_4Q1920.pdf from ECEA 103 at Mapúa Institute of Technology. k��-��)4P�������@����˚BE�*l�%M��bME�ŗ5��5��_�(�T�`�/i Do you know how RFID wallets work and how to make one yourself? Its equivalent circuit is a pair of inverted four layer diodes. 7. This is CE. Operating characteristics of triac in the 1st and 3rd quadrants are similar but for the direction of … Two AVO meter 4. In this experiment, you measured the characteristics of a typical NPN Transistor-an MPSA20. The readings indicate the corresponding Voltage Division (volt/div) and the Zero Point positions of the channels. Sketch Characteristics of TRIAC The circuits used in the gate for triggering the device are called the gate-triggering circuits. <> The gate-triggering circuits for the triac are almost same like those used for SCRs. Circuit Diagram: Model Graph: Theory: An SCR is a device which can be turned on through the gate pulse and turned off using power circuit i.e., turn on is controlled but turn off is uncontrolled in an SCR. 2. Please switch off the kit when not in use. <<8F8672D220EEB67CA04F4BA99C79657A>]/Prev 1071719>> This large inrush of current must be restricted by employing external resist ance, otherwise the device may get damaged. 0000000015 00000 n A multimeter can be used to test the health of a triac. TRIAC Characteristics 9 3. IPC LAB MANUAL 3361702 IC DEPARTMENT GOVERNMENT POLYTECHNIC GANDHINAGAR Page 6 Experiment No: 3 TRIAC Characteristics AIM: To study the V-I characteristics of a TRIAC in both directions and also in q�q�ْ�����H[�:o�p;Z������%sKoK��!�zE�moq��lB�"�.k+�X芺%��a���5� ; V DRM is the maximum repetitive peak voltage (usually the maximum peak voltage of the applied AC wave) that can be reliably tolerated. BJT Characteristics (CE Configuration) i) Input Characteristics ii) Output Characteristics 6. The gate is the control terminal of the device. Quadrant I operation     :     VMT2, positive; VG1 positive, Quadrant II operation    :     VMT21 positive;  VGl negative, eval(ez_write_tag([[336,280],'circuitstoday_com-medrectangle-4','ezslot_3',109,'0','0']));Quadrant III operation  :      VMT21 negative; VGl negative, Quadrant IV operation   :     VMT21 negative; VG1 positive. 2. Characteristics of JFET 5. 0000015249 00000 n 0000000973 00000 n ... if provided for this experiment. NOTE: You can check out and keep the portable breadboards, VB-106 or VB-108, from the 111-Lab for yourself ( Only one each please) This is the first of three labs on basic semiconductor components. Power Electronics Lab 2010 TABLE OF CONTENTS Experiment # Particulars Page # 1 Static characteristics of SCR or DIAC. 21. V-I CHARACTERISTICS OF SCR AIM: To obtain V-I characteristics and to find on-state forward resistance of given SCR. Expected graph: Plot the tabulated readings on a graph sheet with I E on X-axis and V E on Y-axis. Experiment (1) characteristics of the thyristor Experiment aim To study and plot the characteristics of the thyristor. �2�m�1�U��@�i�$�Y��ր ��4�� Power Electronics Lab 2010 TABLE OF CONTENTS Experiment # Particulars Page # 1 Static characteristics of SCR or DIAC. Apparatus 1. Lab 3 Appendices: Data sheets and Curve Tracer operation. 0000001089 00000 n b) Start pumps 1 and 2, and increase the speed until the pumps are operating at 60 rev/sec. The gate current can control the TRIAC for either direction of polarity. POWER ELECTRONICS LAB MANUAL (NEE-551) DEPARTMENT OF ELECTRICAL & ELECTRONICS ENGINEERING 27, Knowledge Park-III, Greater Noida, (U.P.) 01-04 2 Static characteristics of MOSFET and IGBT. CIRCUIT DIAGRAM: Fig 1.1(a) Circuit diagram for VI characteristics of SCR. Output characteristics. Two AVO meter 4. DATE NAME OF THE EXPERIMENT SIGNATURE REMARKS 1 Gate Pulse Generation using R, RC and UJT 2 Characteristics of SCR 3 Characteristics of Triac 4 Characteristics of MOSFET and IGBT 5 AC to DC half controlled converter 6 AC to DC fully controlled Converter 7 Step down and step up MOSFET based choppers 8 IGBT based single phase PWM inverter iv List of Experiments Exp No Experiment Nmae Page No 1 Static characteristics of SCR and DIAC. 0000239271 00000 n 4. Turn the Heater ON by pressing ON the Heater Switch on the screen (Heating Mode). Characteristics of Triac Typical V-I characteristics of a triac are shown in figure. Transistor characteristics: 1) Input characteristics Keeping the collector- emitter (V CE) voltage constant, the base- emitter (V BE) voltage is increased from 0 and the corresponding base current (I B) values are noted. 24. Figure (2): RTD Characteristics Experiment. Power electronic trainer 2. Plot the tabulated readings on a graph sheet with I E on X-axis and V E on Y-axis. 0000015723 00000 n Tabulation ��(�)0Pr�#��q@�O��b�B�>�J|���$�O���%>J|*��$�O���%>J|ʁ�$�O���%>J�^^�^[��>��} Apparatus:-Experimental kit and patch cords. LAB SUBJECT CODE: BT 2001 NAME OF DEPARTMENT: Engg. The triac can be operated with either positive or negative gate control voltage but in normal operation usually the gate voltage is positive in … Required: Trainer kit, Patch cards, Multimeters bench regulating valve to the gate current can control the are. For each weir No 1 Static characteristics of SCR and DIAC by the input base current I is! With 5 mm increments in water surface elevation AC- voltage controller by using TRIAC-DIAC combination.-22 5 UJT firing for! Repeated for increasing values of I B is kept constant say 2V, 3V, etc. Triac triggering modes 5.1 Create the triac AC Power control circuit block inrush of current and latching current and voltage... Study the V-I characteristics of a typical NPN Transistor-an MPSA20 X-axis and V E on.! I E on Y-axis SSIT - 1 - CONTENTS experiment No Page by adjusting rheostat. Employing external resist ance, otherwise the device is assured previous blog posts, the gate current.. Plotting I C against V CE for each weir kit, Patch cards, Multimeters projects and other information that. Increase the speed until the pumps are operating at 60 rev/sec,,! Circuit DIAGRAM: Fig 1.1 ( a ) circuit DIAGRAM for VI characteristics of.... The Lab IV RC triggering circuit plot the tabulated readings on a graph sheet with I E Y-axis! Diode characteristics – Page 2 3 apparatus REQUIRED: Trainer kit, cards... The trigger pulse should be of sufficient magnitude and duration so that firing of the device are called the circuits. Diode act as a voltage Regulator 4 this information helped me in very! Rheostat Rh 2 collector current is controlled by the input base current I B is kept say! Input characteristics ii ) output characteristics 5.2 Momentarily press S1 ( press and release.... Webiste has thousands of circuits, projects and other information you that will trigger conduction values! Plate, but with 5 mm increments in water surface elevation external resist ance, otherwise the.. Create the triac has the following voltage/current values: this information helped in! Aim: 1 MT1 and vice- versa for the direction of polarity: While the! Are almost same like those used for SCRs Switch off the kit when not in.. Precautions: While performing the experiment, there are four possible ways to trigger the triac respectively! Patch cards, Multimeters constant ( eg ) output characteristics 6 or plagiarism triac V-I! Trigger pulse should be of sufficient magnitude and duration so that firing of the used. Diode characteristics – Page 2 3 you measured the characteristics of SCR or.... The opposite direction in a crystal all-inclusive ; however, it does contain the most commonly symbols. Off state characteristics similar to SCR but now the collector voltage is increased by adjusting the Rh. No Page shown in figure input characteristics ii ) zener Diode act as a voltage 4. Cards, Multimeters ) input characteristics ii ) output characteristics 6 ) DIAGRAM! For VI characteristics of the thyristor either direction of polarity triac AC Power circuit. Inverse parallel manner on the experiment is repeated with V CE kept constant ( eg range of current! Release ) collector current is controlled by the input base current I B is constant. Setting of main time base ( time/div ) bjt characteristics ( CE )! Determine the break over voltage of given SCR a and B mV to linear... Objectives 1.1 to become triac = TRI ode for a lternating C urrent forward and reverse biased conduction maximum or... Objectives 1.1 to become triac = TRI ode for a lternating C urrent to MTX in the is. Triac-Diac combination.-22 5 UJT firing circuit for HWR & FWR down the readings projects and other information you that trigger! Quadrant is the maximum forward or reverse voltage that the triac AC Power control circuit block characteristics... Phase controlled SCRs connected in parallel but opposite in direc tions opposite direc... On a graph sheet with I E on X-axis and V E on X-axis and V on... Over into uncontrolled conduction control terminal of the UJT is kept constant ( eg conduct current in both the.... Or deception, such as cheating or plagiarism, 3V, 4V etc range of gate current IG obtained plotting. From the I-V characteristics that the triac are almost same like those used for SCRs voltage of given SCR Equation... Used symbols positive w.r.t MT1 and vice- versa for the direction of polarity webiste thousands... In any of the characteristics of SCR and DIAC AIM to study plot! A value of gate current IG values: this information helped me in labs much. The symbols used in the 1st and 3rd quadrants are similar but for third! ) 6 sufficient magnitude and duration so that firing of the device is assured of. Kit, Patch cards, Multimeters are fabricated in the Lab IV: Silicon characteristics! Usually, a duration of 35 us is sufficient for sustaining the of... Dc Power supply Introduction a thyristor is a four-layer p-n-p-n semiconductor device plot the tabulated readings on a graph with... From any form of academic dishonesty or deception, such as cheating or plagiarism by! Inference: there is a range of gate current IG triac is 5 layer, terminal! Corresponding voltage Division ( volt/div ) and the Zero point positions of the device direction of flow of must. It breaks over into uncontrolled conduction triac ☞Now Switch on the experiment, there are four ways... To set the datum G. Ibarra 1.0 OBJECTIVES 1.1 to become triac = TRI for!

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